OPI-160 WAFER-LEVEL LED MEASUREMENT SYSTEM
- Easy to measure various items, User interface (Support on-demand SW design)
- ¤ýOptical Measurement
- Spectrum, Peak/Dominant wavelength(¥ëp, ¥ëd), CIE Color Coordinate(Cx, Cy), Luminous Intensity(cd), Correlated Color Temperature(CCT(Tc)), Color Rendering Index(CRI(Ra)), CIE XYZ(), Radiant Flux(mW), Luminous Flux(lm), Spatial Intensity Distribution(IES, LDT)
- ¤ýElectrical Measurement
- Forward/ Reverse Current[lf, lr], Forward/Reverse Voltage[Vf, Vr], l-V-L Sweep
- ¤ýTemperature Dependence Measurement
- Temperature.VS.Electrical/optical Test
- ¤ýCurrent Spreading and Degradation Analysis
- Real time Image analysis of LED using CCD Camera and beam profiler software
- Optimized for R&D
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¤ý Integrated measurement of optical, electrical and thermal dependency required in wafer level.
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¤ý Automation of measurement and convenient user environment.
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¤ý Observation of Chip Current spreading and degradation using high resolution microscope and camera.
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¤ý Function integration and verification by a number of reseachers.
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¤ý Provide CIE measurement mode andKRISS standard value.
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¤ý High precision measurement using Keithley 2612
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¤ý Low noise and high precision / reproduction using TE Cooled 2048 pixel CCD sensor.
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¤ý Display light distribution characteristics in 2D/3D graphs and data list by analyzing, summarizing and duplicating measured data.