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OPI-160  WAFER-LEVEL LED MEASUREMENT SYSTEM

Easy to measure various items, User interface (Support on-demand SW design), integrated measurement of optical, electrical and thermal dependency required in wafer level, automation of measurement and convenient user environment, observation using high r


  • Easy to measure various items, User interface (Support on-demand SW design)
  • ㆍOptical Measurement
  •    Spectrum, Peak/Dominant wavelength(λp, λd), CIE Color Coordinate(Cx, Cy), Luminous Intensity(cd), Correlated Color Temperature(CCT(Tc)), Color Rendering Index(CRI(Ra)), CIE XYZ(), Radiant Flux(mW), Luminous Flux(lm), Spatial Intensity Distribution(IES, LDT)
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  • ㆍElectrical Measurement
  •    Forward/ Reverse Current[lf, lr], Forward/Reverse Voltage[Vf, Vr], l-V-L Sweep
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  • ㆍTemperature Dependence Measurement
  •    Temperature.VS.Electrical/optical Test
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  • ㆍCurrent Spreading and Degradation Analysis
  •    Real time Image analysis of LED using CCD Camera and beam profiler software
  • Optimized for R&D

  • ㆍ Integrated measurement of optical, electrical and thermal dependency required in wafer level.

  • ㆍ Automation of measurement and convenient user environment.

  • ㆍ Observation of Chip Current spreading and degradation using high resolution microscope and camera.

  • ㆍ Function integration and verification by a number of reseachers.

  • ㆍ Provide CIE measurement mode andKRISS standard value.

  • ㆍ High precision measurement using Keithley 2612

  • ㆍ Low noise and high precision / reproduction using TE Cooled 2048 pixel CCD sensor.

  • ㆍ Display light distribution characteristics in 2D/3D graphs and data list by analyzing, summarizing and duplicating measured data.